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Specification
Brand : DIODES
BulletPoint : SOP8 package
BulletPoint1 : ChannelType: P-Channel; VoltageDraintoSource: 60 V; Drain-sourceOnResistance-Max: 14 ?;
BulletPoint2 : RatedPowerDissipation(P): 625 mW;
BulletPoint3 : Noofchannels: 1
BulletPoint4 : VoltageDraintoSource: 55 V
BulletPoint5 : Drain-sourceOnResistance-Max: 0.035 ΩRatedPowerDissipation(P): 110 W; QgGateCharge: 48 nC; GateSourceVoltageMax: 16 V; DrainCurrent-Max(ID): 47 A; Turn-onTime-Nom(ton): 11 ns; Turn-offTime-Nom(toff): 26 ns; RiseTIme: 84 ns; FallTime: 15 ns
ExternallyAssignedProductIdentifier1 : 0603894280222
ExternallyAssignedProductIdentifier2 : 603894280222
ItemName : DIODES ZVP3306A P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92 - 10 item(s)
ItemPackageDimensions_Height : 13.3 centimeters
ItemPackageDimensions_Length : 1.4 centimeters
ItemPackageDimensions_Width : 3.8 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : DIODES
Material : silicon
ModelNumber : ZVP3306A
NumberOfItems : 10
PartNumber : ZVP3306A
ProductDescription : P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
ProductSiteLaunchDate : 2017-10-13T15:12:27.636Z
SupplierDeclaredDgHzRegulation : unknown
UnitCount : 1
Voltage : 200 volts
Wattage : 125 watts