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Specification
AgeRangeDescription : Baby
Brand : CHANZON
BulletPoint : 1 Pcs RD15HVF1 TO220 MOSFET Transistor 175MHz520MHz 15W
BulletPoint1 : Transistor Type: Dual N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).
BulletPoint2 : Package Type: High-Quality SOP-8 Surface-Mounted Device (SMD) Package.
BulletPoint3 : Performance: Highly Efficient Dual NMOS Transistor suitable for various applications.
BulletPoint4 : Application: Commonly used in power conversion and management applications such as power supplies, motor control, and high-frequency applications.
BulletPoint5 : Packaging: Ships in an Anti-Static bag for electrostatic protection, ensuring ESD safety and long shelf-life.
EducationalObjective : Coding
ExternallyAssignedProductIdentifier : 6014140290904
ExternallyAssignedProductIdentifier1 : 0710667589472
ExternallyAssignedProductIdentifier2 : 710667589472
ExternallyAssignedProductIdentifier3 : 00768249113515
FitType : Vehicle Specific
ItemName : Chanzon IRF7103TRPBF SOP-8 Dual MOS Transistor, NMOS N-Channel Power MOSFET Transistor SMD, High Efficiency (Pack of 10pcs)
ItemPackageDimensions_Height : 1 centimeters
ItemPackageDimensions_Length : 16 centimeters
ItemPackageDimensions_Width : 14 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : CHANZON
Material : metal
ModelNumber : 30N06L FQP30N06L
NumberOfItems : 20
NumberOfPlayers : 1
OperationMode : Automatic
PartNumber : IRF7103TRPBF-SOP-8-10
ProductDescription :

Discover the power of efficiency with our Dual N-Channel MOSFET, designed for high-performance power applications. This MOSFET boasts an ultra-low on-resistance for minimal power loss and a dynamic dv/dt rating for fast switching capabilities, making it ideal for a variety of power management needs.

Key Features:

• Ultra Low On-Resistance: Ensures high efficiency and less heat generation.
• Dynamic dv/dt Rating: Fast switching for applications requiring quick response times.
• Lead-Free and Surface Mount: Environmentally friendly and suitable for automated assembly processes.
• Enhanced Thermal Characteristics: Custom leadframe design allows for greater power dissipation, making it suitable for high-heat applications.
• Drain-to-Source Breakdown Voltage (V(BR)DSS): 50V for reliable voltage handling.
• Gate Threshold Voltage (Vgs(th)): Between 1.0V to 3.0V, ensuring sensitive and responsive control.
• Turn-On Delay Time (td(on)): Typically 9.0ns.
• Rise Time (tr): Typically 8.0ns, indicating swift transition from off to on state.
• Internal Drain Inductance (Ld): 4.0nH, minimizing inductive effects for stable operation.

Our MOSFET is available in a compact SO-8 package, perfect for space-constrained designs and is compatible with vapor phase, infra red, or wave soldering techniques. With a junction temperature range of -55°C to +150°C, it's built to withstand a wide range of operating conditions.

For your peace of mind, our product is backed by rigorous testing and quality assurance, ensuring reliability and longevity. Whether you're working on power electronics, motor drives, or renewable energy systems, this MOSFET is the perfect choice for your next project.

ProductSiteLaunchDate : 2020-10-28T06:48:30.262Z
Size : SOP-8
StreetDate : 2017-03-12T00:00:01Z
Style : IRF7103TRPBF
SupplierDeclaredDgHzRegulation : not_applicable
TargetGender : unisex
UnitCount : 1
Voltage : 100 volts
WarrantyDescription : 90 Days
Wattage : 50 watts