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Specification
Brand : Aoweziic
BulletPoint : Package contents:IRFB3607PBF 75V 80A TO-220 （5pieces）
BulletPoint1 : 1: Transistor MOS FET adapts to power motherboard
BulletPoint2 : 2: IRFB4110PBF MOSFET transistor meets the requirements of power supply motherboards.
BulletPoint3 : 3:MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
BulletPoint4 : 4:Features and advantages: Long service life, fast switching, durable materials.
BulletPoint5 : 5:Widely used: IRFB4110PBF IRFB4110 MOSFET transistors are widely used in various electronic components.
BulletPoint6 : 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.
Color : As Shown
CurrentRating : 30 amps
ExternallyAssignedProductIdentifier : 4861433782767
ExternallyAssignedProductIdentifier1 : 0728161155215
ExternallyAssignedProductIdentifier2 : 728161155215
IncludedComponents : electronic component
ItemName : Aoweziic 100% New Imported Original IRFB4110PBF IRFB4110 TO-220 MOS FET 100V 180A (10pcs/LOT ）
ItemPackageDimensions_Height : 0.5 centimeters
ItemPackageDimensions_Length : 21.5 centimeters
ItemPackageDimensions_Width : 8 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : Aoweziic
Material : Copper
MaximumVoltage : 24 volts
ModelNumber : IRFB4110PBF
MountingType : PCB Mount
NumberOfBoxes : 10
NumberOfItems : 10
OperatingVoltage : 24 volts
PartNumber : A1
PowerSourceType : Corded Electric
ProductDescription : Product type: MOSFET RoHS: Detailed Information Technology: Si Installation style: Through Hole Packaging/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 channel Vds drain source breakdown voltage: 200 V Id continuous drain current: 65 A Rds On drain source on resistance: 24 mOhms Vgs - Gate Source Voltage: -30 V,+30 V Vgs th gate source threshold voltage: 1.8 V QG gate charge: 70 nC Minimum operating temperature: -40 ° C Maximum operating temperature:+175 ° C Pd power dissipation: 330 W Channel mode: Enhancement Encapsulation: Tube Configuration: Single Descent time: 31 ns Forward transconductance - minimum value: 49 S Height: 15.65 mm Length: 10mm Product type: MOSFETs Rise time: 20 ns Subcategory: Transistors Transistor type: 1 N-Channel Typical shutdown delay time: 21 ns Typical connection delay time: 33 ns Width: 4.4 mm
ProductSiteLaunchDate : 2024-10-24T18:38:23.898Z
SupplierDeclaredDgHzRegulation : other
SupplierDeclaredHasProductIdentifierExemption : 1
UnspscCode : 32111603