100% New Imported Original IRFB4227PBF IRFB4227 TO-247 N-Channel MOS FET 200V 65A (10pcs/LOT ?

Imported from USA | Ships in 10 working days

5% instant discount on non COD

1

₹ 3100/-

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Product Information


Specification
AgeRangeDescription : adult
Brand : LIUWEIJIE
BulletPoint : Relays
BulletPoint1 : 1: Transistor MOS FET adapts to power motherboard
BulletPoint2 : 2: IRFB4227PBF MOSFET transistor meets the requirements of power supply motherboards.
BulletPoint3 : 3:Rated current: 200V 65A 26mOhm 70nC Qg
BulletPoint4 : 4:Features and advantages: Long service life, fast switching, durable materials.
BulletPoint5 : 5:Widely used: IRFB4227PBF IRFB4227 MOSFET transistors are widely used in various electronic components.
BulletPoint6 : 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.
Color : #211
ExternallyAssignedProductIdentifier : 7347896541075
ExternallyAssignedProductIdentifier1 : 0752815253231
ExternallyAssignedProductIdentifier2 : 752815253231
IncludedComponents : electronic component
ItemName : 100% New Imported Original IRFB4227PBF IRFB4227 TO-247 N-Channel MOS FET 200V 65A (10pcs/LOT )
ItemPackageDimensions_Height : 0.5 centimeters
ItemPackageDimensions_Length : 21.5 centimeters
ItemPackageDimensions_Width : 8 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : CHINA
ModelName : TSIOHKBS
ModelNumber : IRFB4227PBF
NumberOfBoxes : 10
NumberOfItems : 10
PartNumber : A1
ProductDescription : Product type: MOSFET RoHS: Detailed Information Technology: Si Installation style: Through Hole Packaging/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 channel Vds drain source breakdown voltage: 200 V Id continuous drain current: 65 A Rds On drain source on resistance: 24 mOhms Vgs - Gate Source Voltage: -30 V,+30 V Vgs th gate source threshold voltage: 1.8 V QG gate charge: 70 nC Minimum operating temperature: -40 ° C Maximum operating temperature:+175 ° C Pd power dissipation: 330 W Channel mode: Enhancement Encapsulation: Tube Configuration: Single Descent time: 31 ns Forward transconductance - minimum value: 49 S Height: 15.65 mm Length: 10mm Product type: MOSFETs Rise time: 20 ns Subcategory: Transistors Transistor type: 1 N-Channel Typical shutdown delay time: 21 ns Typical connection delay time: 33 ns Width: 4.4 mm
ProductSiteLaunchDate : 2024-08-03T15:29:03.007Z
Size : One Size
SupplierDeclaredDgHzRegulation : other
UnitCount : 1

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