100% New Imported Original IRF740PBF IRF740 TO-220 N-Channel MOS FET 400V 10A (10pcs/LOT)

Customer rating 4.3 stars

Imported from USA | Ships in 10 working days

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1

₹3390 -35% ₹2200/-

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Product Information


Specification
AgeRangeDescription : adult
Brand : LIUWEIJIE
BulletPoint : Relays
BulletPoint1 : 1:Transistor MOS FET adapts to power motherboard
BulletPoint2 : 2: IRF740PBF MOSFET transistor meets the requirements of power supply motherboards.
BulletPoint3 : 3:Rated current: N-channel, 400V, 10A, 550m Ω @ 10V
BulletPoint4 : 4:Features and advantages: Long service life, fast switching, durable materials.
BulletPoint5 : 5:Widely used: IRF740PBF IRF740 MOS FET transistors are widely used in various electronic components.
BulletPoint6 : 6: packaging contains 10 components, carefully sealed in an anti-static bag to provide electrostatic bag protection, safety, and extended shelf life.
Color : #211
ExternallyAssignedProductIdentifier : 7347896541075
ExternallyAssignedProductIdentifier1 : 0752815253262
ExternallyAssignedProductIdentifier2 : 752815253262
IncludedComponents : electronic component
ItemName : 100% New Imported Original IRF740PBF IRF740 TO-220 N-Channel MOS FET 400V 10A (10pcs/LOT)
ItemPackageDimensions_Height : 0.5 centimeters
ItemPackageDimensions_Length : 14 centimeters
ItemPackageDimensions_Width : 8 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : CHINA
ModelName : TSIOHKBS
ModelNumber : IRF740PBF
NumberOfBoxes : 10
NumberOfItems : 10
PartNumber : IRF740PBF
ProductDescription : Product type: MOSFET RoHS: Detailed Information REACH - SVHC: Technology: Si Installation style: Through Hole Packaging/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 channel Vds drain source breakdown voltage: 400 V Id - Continuous drain current: 10 A Rds On drain source on resistance: 550 mOhms Vgs - Gate Source Voltage: -20 V,+20 V Vgs th gate source threshold voltage: 4 V QG gate charge: 63 nC Minimum operating temperature: -55 ° C Maximum operating temperature:+150 ° C Pd power dissipation: 125 W Channel mode: Enhancement Series: IRF Encapsulation: Tube Configuration: Single Descent time: 24 ns Height: 15.49 mm Length: 10.41 mm Product type: MOSFETs Rise time: 27 ns Subcategory: Transistors Transistor type: 1 N-Channel Typical shutdown delay time: 50 ns Typical connection delay time: 14 ns Width: 4.7 mm
ProductSiteLaunchDate : 2024-08-03T15:51:03.412Z
Size : One Size
SupplierDeclaredDgHzRegulation : other
UnitCount : 1

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Practical and effective.

Meets basic needs, not exceptional.

Perfect for my needs.

Meets expectations, good buy.

Best in its category!

Best in its category!

Satisfactory but not impressive.

This works like a charm.

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