100% New Imported Original IRF740PBF IRF740 TO-220 N-Channel MOS FET 400V 10A (10pcs/LOT)

Imported from USA | Ships in 10 working days

5% instant discount on non COD

1

₹ 2100/-

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Product Information


Specification
AgeRangeDescription : adult
Brand : LIUWEIJIE
BulletPoint : Relays
BulletPoint1 : 1:Transistor MOS FET adapts to power motherboard
BulletPoint2 : 2: IRF740PBF MOSFET transistor meets the requirements of power supply motherboards.
BulletPoint3 : 3:Rated current: N-channel, 400V, 10A, 550m Ω @ 10V
BulletPoint4 : 4:Features and advantages: Long service life, fast switching, durable materials.
BulletPoint5 : 5:Widely used: IRF740PBF IRF740 MOS FET transistors are widely used in various electronic components.
BulletPoint6 : 6: packaging contains 10 components, carefully sealed in an anti-static bag to provide electrostatic bag protection, safety, and extended shelf life.
Color : #211
ExternallyAssignedProductIdentifier : 7347896541075
ExternallyAssignedProductIdentifier1 : 0752815253262
ExternallyAssignedProductIdentifier2 : 752815253262
IncludedComponents : electronic component
ItemName : 100% New Imported Original IRF740PBF IRF740 TO-220 N-Channel MOS FET 400V 10A (10pcs/LOT)
ItemPackageDimensions_Height : 0.5 centimeters
ItemPackageDimensions_Length : 14 centimeters
ItemPackageDimensions_Width : 8 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : mosfet-transistors
Manufacturer : CHINA
ModelName : TSIOHKBS
ModelNumber : IRF740PBF
NumberOfBoxes : 10
NumberOfItems : 10
PartNumber : IRF740PBF
ProductDescription : Product type: MOSFET RoHS: Detailed Information REACH - SVHC: Technology: Si Installation style: Through Hole Packaging/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 channel Vds drain source breakdown voltage: 400 V Id - Continuous drain current: 10 A Rds On drain source on resistance: 550 mOhms Vgs - Gate Source Voltage: -20 V,+20 V Vgs th gate source threshold voltage: 4 V QG gate charge: 63 nC Minimum operating temperature: -55 ° C Maximum operating temperature:+150 ° C Pd power dissipation: 125 W Channel mode: Enhancement Series: IRF Encapsulation: Tube Configuration: Single Descent time: 24 ns Height: 15.49 mm Length: 10.41 mm Product type: MOSFETs Rise time: 27 ns Subcategory: Transistors Transistor type: 1 N-Channel Typical shutdown delay time: 50 ns Typical connection delay time: 14 ns Width: 4.7 mm
ProductSiteLaunchDate : 2024-08-03T15:51:03.412Z
Size : One Size
SupplierDeclaredDgHzRegulation : other
UnitCount : 1

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