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Specification
AgeRangeDescription : adult
Brand : LIUWEIJIE
BulletPoint : 1 Pcs Field effect transistor (MOSFET) N-channel 80V 80A TO-263 AP8600S
BulletPoint1 : 1: Transistor IGBT adapts to power motherboard
BulletPoint2 : 2: GT50JR22 IGBT Transistors meet the specific needs of welding pliers.
BulletPoint3 : 3:Rated current: IGBT field-effect transistor 50A 600V
BulletPoint4 : 4:Features and advantages: Long service life, fast switching, durable materials.
BulletPoint5 : 5:Widely used: GT50JR22 50JR22 IGBT transistors are widely used in various electronic components.
BulletPoint6 : 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.
Color : One Color
ExternallyAssignedProductIdentifier : 7655583936630
ExternallyAssignedProductIdentifier1 : 0752815253255
ExternallyAssignedProductIdentifier2 : 752815253255
IncludedComponents : electronic component
ItemName : 100% New Imported Original GT50JR22 50JR22 TO-247 IGBT Power Transistor 50A 600V (10pcs/LOT ）
ItemPackageDimensions_Height : 0.5 centimeters
ItemPackageDimensions_Length : 21.5 centimeters
ItemPackageDimensions_Width : 8 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : igbt-transistors
Manufacturer : CHINA
ModelName : EJWFASCV
ModelNumber : GT50JR22
NumberOfBoxes : 10
NumberOfItems : 10
PartNumber : A1
ProductDescription : Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)
ProductSiteLaunchDate : 2024-08-03T17:57:35.107Z
Size : FS150R12KT4
SupplierDeclaredDgHzRegulation : other
UnitCount : 1