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Specification
Brand : SIZENMOTO
BulletPoint1 : Size: 210×210mm ; Fillet diameter: 295mm±0.25 ; Orientation: <100> ±3°;
BulletPoint2 : Type: N-Type ; Dopant: P ; Lifetime:≧1000 uses; Resistivity: 0.3-2.1Ω; Thickness: 120um±20 ;
BulletPoint3 : Oxygen concentration: ≤ 1.0ppma; Carbon concentration: ≤ 12ppma; Corner length: 8~9mm ; Etch Pit Density: ≤500cm-2;
BulletPoint4 : TTV:≤30um ; Saw mark: ≤15um; Warp: ≤50um; Bow: ≤50um Edge Chip: 0.5x0.3mm less than two ;
BulletPoint5 : [Sokatec] High quality Solar Silicon Wafer. Customized products available.
Color : 4inch
ExternallyAssignedProductIdentifier1 : 0749687273030
ExternallyAssignedProductIdentifier2 : 749687273030
ItemName : Siliocn Wafer 4inch N Type 100 Oxide Layers 200nm 0.001-0.005Ω Single Side Polished Semiconductor Substrate【Sokatec】 (1)
ItemPackageQuantity : 1
ItemShape : Round
ItemTypeKeyword : industrial-memory-fifo
Manufacturer : SOKA TECHNOLOGY
Material : copper
ModelNumber : R9A07G043U11GBG#AC0
NumberOfItems : 1
PartNumber : SEMIOX038
ProcessorCount : 4
ProductDescription : Silicon Wafer Specification
Size: 4inch ;
Method: CZ ;
Type: N-Type ;
Dopant:As:;
Orientation: 100 ;
Resistivity: 0.001-0.005Ω ;
Thickness: 500um±25 ;
Oxide Layers: 200nm ;
TTV＜10um ;
Front side: polished ;
Backside: etched ;
Package: silicon wafer case ;

*We can provide small quantities, special specifications products, and customized services.

*Our products include 1-12 inch silicon wafers (dummy, test, prime grade), SiC, GaN, GaAs, InP, LiNbO3, LiTaO3, Sapphire and Quartz substrates, etc.

*As a customization service, we can also process silicon wafer Oxide Layers, nitride film, metal film, EPI, custom ultra-thick, ultra-flat, single-sided / double-sided polishing, thinning, dicing service, etc.
ProductSiteLaunchDate : 2024-07-17T11:00:23.154Z
Size : 4inch N100 0.001~0.005Ω 200nm
SupplierDeclaredDgHzRegulation : unknown
SupplierDeclaredHasProductIdentifierExemption : 1