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Specification
Brand : SIZENMOTO
BulletPoint1 : Size: 114×114×0.32mm ; Surface roughness≤0.8 Ra ; Bulk density: 3.20 ± 0.05 g/cm3
BulletPoint2 : Modulus of elasticity: 300～320Gpa ;Poisson's ratio: ≤0.29 ; Vickers hardness≥14.2Gpa
BulletPoint3 : Coefficient of thermal expansion(25 ℃ ~ 500 ℃): 3.0～3.2 10-6/℃ ; Fracture toughness: 6.0～7.0Mpa ;
BulletPoint4 : Bending strength: 700～800Mpa; Thermal conductivity≥85W/(mk) ;
BulletPoint5 : [Soka] High purity Silicon nitride thermal conductive substrate for research and experiment; Custom processing services can be provided as needed
Color : Grey
ExternallyAssignedProductIdentifier1 : 0781434289345
ExternallyAssignedProductIdentifier2 : 781434289345
ItemName : Silicon Nitride Thermal Conductive Ceramic Substrate 114×114×0.32mm Si3N4 IGBT Electronic Devices【Sokatec】 (3)
ItemShape : Square
ItemTypeKeyword : industrial-memory-fifo
Manufacturer : SOKA TECHNOLOGY
Material : Silicon Nitride
NumberOfItems : 3
PartNumber : SiNSI-002
ProductDescription : Silicon Wafer Specification
Size: 114×114×0.32mm ;
Surface roughness: ≤0.8Ra ;
Bulk density: 3.20 ± 0.05g/cm3 ;
Modulus of elasticity:300～320Gpa ;
Poisson's ratio: ≤0.29 ;
Vickers hardness: ≥14.2Gpa ;
Coefficient of thermal expansion(25 ℃ ~ 500 ℃): 3.0～3.2(10-6/℃) ;
Fracture toughness: 6.0～7.0 MPa ;
Bending strength:700～800 MPa ;
Thermal conductivity (25 ℃): ≥85 W/(mk);

*We can provide small quantities, special specifications products, and customized services.

*Our products include 1-12 inch silicon wafers (dummy, test, prime grade), SiC, GaN, GaAs, InP, LiNbO3, LiTaO3, Sapphire and Quartz substrates, etc.

*As a customization service, we can also process silicon wafer Oxide Layers, nitride film, metal film, EPI, custom ultra-thick, ultra-flat, single-sided / double-sided polishing, thinning, dicing service, etc.
ProductSiteLaunchDate : 2024-02-01T02:38:12.935Z
Size : 114×114×0.32mm