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Specification
Brand : Alpha Nanotech Inc.
BulletPoint1 : Grade: Prime / CZ Virgin
BulletPoint2 : Orientation: 100, Thickness: 300 um +/- 10 um
BulletPoint3 : Type/Dopant: N/Phosphorus
BulletPoint4 : Front Surface: Polished; Back Surface: Etched
BulletPoint5 : TIR < 3 um, TTV < 10 um, BOW < 10 um, Roughness < 0.5 nm
Color : Thickness: 300+/-10 um, Size: 2 inches (50.8 mm)
ExternallyAssignedProductIdentifier1 : 753620419805
ExternallyAssignedProductIdentifier2 : 0753620419805
Hazmat : 9
IncludedComponents : cleaning tool
ItemDisplayDimensions_Height : 1.18 inches
ItemDisplayDimensions_Length : 8.66 inches
ItemDisplayDimensions_Width : 2.76 inches
ItemName : Alpha Nanotech Prime-Grade 2'' Silicon Wafers (N-Type, 300 um) (Qty: 10)
ItemPackageDimensions_Height : 11.7856 centimeters
ItemPackageDimensions_Length : 4.0894 centimeters
ItemPackageDimensions_Width : 10.8966 centimeters
ItemPackageQuantity : 1
ItemTypeKeyword : science-lab-dialysis-supplies
Manufacturer : Alpha Nanotech Inc.
Material : silicone
Material1 : Polypropylene
Material2 : Stainless Steel
ModelName : Other (Brushes)
ModelNumber : KJIAXQAN
NumberOfBoxes : 1
NumberOfItems : 1
PartNumber : ANUF0525S8
ProductDescription : Ultra-Flat Silicon Wafers

Prime/CZ Virgin Grade;
Orientation: <100>;
Resistivity: 1-30 Ω;
Type: P/Dopant: Boron;
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm;
Sizes Available:
Six Inch 6'' Wafer with a Thickness of 650 µm +/- 20 µm;
Four Inch 4'' Wafer with a Thickness of 525 µm +/- 20 µm;
Three Inch 3'' Wafer with a Thickness of 400 µm +/- 20 µm;
Two Inch 2'' Wafer with a Thickness of 300 µm +/- 15 µm;

Formats Available:
1 Piece in a Wafer Carrier;
10 Pieces in a Wafer Box;
25 Pieces in a Wafer Box;
Wafer carriers or wafer boxes are included for every single purchase.

We offer the ultra-flat silicon and silica wafers of the prime grade. These silicon and silica wafers are perfect for chemical deposition or cell growth while the 5mm x 5mm diced chips are ideal for direct AFM and SEM imaging. The silica substrates are silicon substrates uniformly coated with a 200 nm thermally grown SiO2 surface layer. Compared with the transitional chemical vapor deposition (CVD) method, the thermal oxidation provides a higher uniformity and a higher dielectric strength. Please visit https://www.amazon.com/dp/B07C1KPC92 for our listings for silica wafers.

For more information, please visit us at www.alphananotechne.com
or send us your questions to info@alphananotechne.com
or ask questions directly on the "Have a question?" tab above.
ProductSiteLaunchDate : 2018-10-21T14:00:00.000Z
Size : Single Side Polished, Resistivity: 1- 30 ohm·cm
Style : Qty: 10
SupplierDeclaredDgHzRegulation : not_applicable
UnitCount : 1
UnspscCode : 41000000