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Brand : USSR
BulletPoint1 : KT837V analoge 2SB834, 2SB906 transistor silicon USSR 10 pcs
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ExternallyAssignedProductIdentifier : 4697858320129
ItemName : S.U.R. & R Tools KT837V analoge 2SB834, 2SB906 Transistor Silicon USSR 10 pcs
ItemPackageQuantity : 1
ItemTypeKeyword : darlington-transistors
Manufacturer : USSR
ModelNumber : 1T806G
PartNumber : USSR
ProductDescription : Transistors KT837V silicon epitaxial-diffusion structures p-n-p switching. Designed for use in amplifiers and switching devices. KT837V: Structure of the transistor: p-n-p; Рк т max - Constant dissipated collector power with heatsink: 30 W; fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: at least 1 MHz; UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 80 V; Ueb max - The maximum emitter-base voltage for a given reverse current of the emitter and open collector circuit: 15 V; Iк max - Maximum permissible constant collector current: 7.5 A; Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 0.15 mA; h21e - Static transistor current transfer coefficient for circuits with common emitter: 50 ... 150; Rke us - Resistance of saturation between the collector and emitter: no more than 0.8 Ohm
ProductSiteLaunchDate : 2014-02-06T08:00:00.000Z