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Brand : USSR
BulletPoint1 : KT829V analoge BD331, BD643, BD677, BDW23A, BDX53A transistor silicon USSR 10 pcs
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ExternallyAssignedProductIdentifier : 4687956321210
ExternallyAssignedProductIdentifier1 : 0729530478348
ExternallyAssignedProductIdentifier2 : 729530478348
ItemName : S.U.R. & R Tools KT829V analoge BD331, BD643, BD677, BDW23A, BDX53A Transistor Silicon USSR 10 pcs
ItemPackageQuantity : 1
ItemTypeKeyword : darlington-transistors
Manufacturer : USSR
Material : Copper
ModelNumber : 1T806G
PartNumber : USSR
ProductDescription : Transistors KT829V silicon mesaplanar structures n-p-n compound amplifying. Designed for use in low-frequency amplifiers, switching devices. KT829V: Structure of the transistor: n-p-n; Рк т max - Permanent dissipated collector power with heat sink: 60 W; fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: at least 4 MHz; Uke max - Maximum collector-emitter voltage for a given collector current and a given resistance in the base-emitter circuit: 60 V (1 kΩ); Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; Iк max - Maximum permissible constant collector current: 8 A; Iк and max - The maximum allowable pulse current of the collector: 12 A; Ike - Collector-emitter return current for given collector-emitter return voltage and base-emitter resistance: 1.5 mA (100 V); h21e - Static transistor current transfer ratio for circuits with common emitter: more than 750; Sk - Collector junction capacity: not more than 120 pF; Rke us - Resistance of saturation between the collector and emitter: no more than 0.57 Ohm
ProductSiteLaunchDate : 2014-02-06T08:00:00.000Z