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Juried Engineering 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 10)

Juried Engineering 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 10)

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Product Information


Specification
Brand : Juried Engineering
BulletPoint1 : Collector to emitter breakdown voltage of 160V
BulletPoint2 : Collector to emitter saturation voltage of 200mV at 50mA collector current
BulletPoint3 : Power dissipation of 625mW, Operating junction temperature range from -55°C to 150°C
BulletPoint4 : DC collector current of 600mA, DC current gain of 30 at Ic=50mA
BulletPoint5 : Example Applications: Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
ExternallyAssignedProductIdentifier1 : 0799993469801
ExternallyAssignedProductIdentifier2 : 799993469801
ItemName : Juried Engineering 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 10)
ItemTypeKeyword : bjt-transistors
Manufacturer : Juried Engineering
Material : PDIP
ModelNumber : 2N5551
NumberOfItems : 5
PartNumber : 2N5551
ProductDescription : The 2N5551 from Fairchild is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
ProductSiteLaunchDate : 2020-07-07T00:46:51.878Z
Size : Juried Engineering ESD Safe Packaging (Pack of 5)

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