Specification Brand : PartsNovar BulletPoint : 5pcs/lot 2SC1969 NPN TO-220 BulletPoint1 : Transistors silicon KT808BM analoge BDY71, 2SC1618, 2N6374 USSR 5 pcs BulletPoint2 : If you can't find the item you need, you may contact us. ExternallyAssignedProductIdentifier : 4652292184287 Frequency : 8 MHz ItemName : 5pcs/lot 2SC1969 NPN TO-220 ItemPackageQuantity : 1 ItemTypeKeyword : bjt-transistors Manufacturer : PartsNovar Material : Other PartNumber : FJGNEWicmz-01683 ProductDescription : KT808BM Silicon Transistors mezaplanarnye structure npn switching. Designed for use in switching devices, generators, horizontal, electronic voltage regulators. The main technical characteristics of the transistor KT808BM: The structure of the transistor: npn; Pk t max - Dissipated power collector with heat sink: 60W; fgr - Cut-off frequency of the transistor current gain for the common-emitter: not less than 8 MHz; Uker max - maximum collector-emitter voltage at a given current collector and a given resistance in the circuit of the base-emitter: 100 (160 imp.) V; Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V; Ik max - Maximum DC Collector Current: 10 A; Iker - Reverse current collector-emitter voltage for a given reverse voltage of the collector-emitter voltage and resistance in the base-emitter: 2 mA (120 V); h21e - Static current transfer ratio of the transistor to the common-emitter: 20 ... 125; CK - collector junction capacity: up to 500 pF; Rke us - saturation resistance between the collector and emitter: no more than 0.33 ohms ProductSiteLaunchDate : 2021-12-28T08:05:50.377Z